NE664M04-T2-A Features
* Ideal for 460 MHz to 2.4 GHz medium output power amplification
* PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
* High collector efficiency: ηC = 60%
* UHS0-HV technology (fT = 25 GHz) adopted
* High reliability through use of gold electr
NE664M04_CaliforniaEasternLabs.pdf
Datasheet Details
NE664M04-T2-A, NE664M04
CEL
2.07 MB
Npn silicon rf transistor.
This datasheet PDF includes multiple part numbers: NE664M04-T2-A, NE664M04.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
NE664M04-A NPN SILICON RF TRANSISTOR (CEL)
NE664M04 NPN SILICON RF TRANSISTOR (California Eastern Labs)
NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
NE66219 NPN SILICON RF TRANSISTOR (California Eastern Labs)
NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
NE662M16 NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NE662M16 NPN SILICON RF TRANSISTOR (CEL)
NE664M04-T2-A Distributor
