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NE664M04-T2-A Datasheet - CEL

NE664M04-T2-A NPN SILICON RF TRANSISTOR

NE664M04-T2-A Features

* Ideal for 460 MHz to 2.4 GHz medium output power amplification

* PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

* High collector efficiency: ηC = 60%

* UHS0-HV technology (fT = 25 GHz) adopted

* High reliability through use of gold electr

NE664M04-T2-A Datasheet (2.07 MB)

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Datasheet Details

Part number:

NE664M04-T2-A

Manufacturer:

CEL

File Size:

2.07 MB

Description:

Npn silicon rf transistor.

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NE664M04-T2-A NPN SILICON TRANSISTOR CEL

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