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NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

NE651R479A Features

* GaAs HJ-FET structure

* High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm

NE651R479A General Description

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE65.

NE651R479A Datasheet (69.20 KB)

Preview of NE651R479A PDF

Datasheet Details

Part number:

NE651R479A

Manufacturer:

NEC

File Size:

69.20 KB

Description:

0.4 w l-band power gaas hj-fet.

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TAGS

NE651R479A 0.4 L-BAND POWER GaAs HJ-FET NEC

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