NE651R479A Datasheet (NEC) - 0.4 W L-BAND POWER GaAs HJ-FET

NE651R479A, 0.4 W L-BAND POWER GaAs HJ-FET

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE65

NE651R479A Features

* GaAs HJ-FET structure

* High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm