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NE650R279A

0.2 W L / S-BAND POWER GaAs MES FET

NE650R279A Features

* High Output Power

* High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ.

* High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz ORDERING INFORMATION (PLAN) Part Number NE650R279A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Rema

NE650R279A General Description

The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver ampl.

NE650R279A Datasheet (77.98 KB)

Preview of NE650R279A PDF

Datasheet Details

Part number:

NE650R279A

Manufacturer:

NEC

File Size:

77.98 KB

Description:

0.2 w l / s-band power gaas mes fet.

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TAGS

NE650R279A 0.2 S-BAND POWER GaAs MES FET NEC

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