MES Datasheet | Specifications & PDF Download

JA5088SL One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION JA5088SL is a spacing saving single chip lithium-ion/polymer battery

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PRELIMINARY www.DataSheet4U.com I1800 SERIES SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 6- TO 16-SECOND DURATION -1- Publication Rel

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NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage, VCE . . . . . . . . . . . . .

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www.DataSheet4U.com PRELIMINARY ISD1720 Multi-Message Single-Chip Voice Record & Playback Device Publication Release Date: April 4, 2007 Revision 0

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VRM = 100 V, IF(AV) = 40 A Schottky Diode FMES-24010 Data Sheet Description The FMES-24010 is a 100 V, 40 A Schottky diode with allowing improvement

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ISD4002 SERIES SINGLE-CHIP, MULTIPLE-MESSAGES VOICE RECORD/PLAYBACK DEVICES 120-, 150-, 180-, AND 240-SECOND DURATION Publication Release Date: Septem

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-140 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W pus

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Silicon Tuning Varactor q BBY 33 BB-2 Tuning varactor in passivated Mesa technology (epitaxial design) Type BBY 33 BB-2 Marking – Ordering Code Q

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www.DataSheet4U.com ® STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P11NB40 ST P11NB40FP s s s

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ISD15100 ISD ChipCorder® ISD15100 Series Datasheet The information described in this document is the exclusive intellectual property of Nuvoton Techn

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ALUMINUM ELECTROLYTIC CAPACITORS KS Snap-in Terminal Type, For Audio Equipment, Smaller-sized series Smaller and high-tone quality than KG series TYP

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ALUMINUM ELECTROLYTIC CAPACITORS KS Snap-in Terminal Type, For Audio Equipment, Smaller-sized series Smaller and high-tone quality than KG series TYP

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Global LCD Panel Exchange Center www.panelook.com TFT Color LCD Module M141-X76C Doc No. : DT2-76C-01 1/21 P/N:7BD76C00 EC :6V24008 One step solut

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GaAs MMICs GN1010 GN1010 GaAs N-Channel MES IC For high-output high-gain amplification 0.65±0.15 Unit : mm 2.8 –0.3 +0.2 +0.2 1.5 –0.3 0.65±0.15

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ISD2532/40/48/64 SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION -1- Publication Release Date: J

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DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x H

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STS12NH3LL N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STS12NH3LL s s

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LOW NOISE L TO K-BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG

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www.DataSheet4U.com XX-XXXX; Rev 0; 10/05 Automatic RF MESFET Amplifier Drain-Current Controllers General Description The MAX11014/MAX11015 set and

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