MES Datasheet | Specifications & PDF Download

JA5088SL One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION JA5088SL is a spacing saving single chip lithium-ion/polymer battery

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LMR-400 Cable flexible para comunicaciones Ideal para TIMES MICROWAVE SYSTEMS A Smiths Group PLC Company 358 Hall Ave., Wallingford, CT, 06492-503

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NS4752 BOOST、、、3.6V/5WAB/D NS4752 V1.0 Nsiway 2013 03 1 NS4752 BOOST、、、3.6V/5WAB/D Nsiway 2 NS4752 BOOST、、、3.6V/5WAB/D 1

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DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x H

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Silicon Tuning Varactor q BBY 33 BB-2 Tuning varactor in passivated Mesa technology (epitaxial design) Type BBY 33 BB-2 Marking – Ordering Code Q

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LOW NOISE L TO Ku-BAND GaAs MESFET NE76038 Noise Figure, NF (dB) Associated Gain, GA (dB) FEATURES • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz • H

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PA9122AP SINGLE PHASE POWER/ENERGY ADAPTOR WITH 64 SEGMENT LCD AND SERIAL INTERFACE FEATURES n sames SA9122APA APPLICATION NOTE Enables the demonst

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NF4000A-BY Series 3 Phase & 4 lines 250VAC 4 Lines Type Root 3 times current on neutral line is available. UL1283 (file No.E102708) Application Inv

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DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe

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GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel

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Meshreen MS5168 ZigBee Module MS5168-Mxx series ©Meshreen DS-MS5168 / info@meshreen.com 1 Content 1. Introduction

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Meshreen MS5168 ZigBee Module MS5168-Mxx series ©Meshreen DS-MS5168 / info@meshreen.com 1 Content 1. Introduction

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pu

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DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs ME

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST

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Radio(AC100 ~120V) ~7> て;'::J i~ 4i -65 ~ 1 50 TB-~3 Gp• CO~l~lON

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LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST

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