SGM2013N
Description
The SGM2013N is an N-channel dual-gate Ga As MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features
- Ultra-small package
- Low voltage operation
- Low noise NF = 1.4d B (Typ) at 900MHz, NF = 1.7d B (Typ) at 1.5GHz
- High gain Ga = 18d B (Typ) at 900MHz, Ga = 16d B (Typ) at 1.5GHz
- High stability
- Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure Ga As, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C)
- Drain to source voltage VDSX 6
- Gate 1 to source voltage VG1S
- 4
- Gate 2 to source voltage VG2S
- 4
- Drain current ID 18
- Allowable power dissipation PD 100
- Channel temperature Tch 125
- Storage temperature Tstg
- 55 to +150 M-281
V V V m A m W °C °C
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