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SGM2013N - GaAs N-channel Dual-Gate MES FET

Sony Corporation

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Datasheet Details

Part number	SGM2013N
Manufacturer	Sony Corporation
File Size	54.89 KB
Description	GaAs N-channel Dual-Gate MES FET
Datasheet	SGM2013N_SonyCorporation.pdf

SGM2013N Product details

Description

The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

Features

Ultra-small package.
Low voltage operation.
Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz.
High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz.
High stability.
Built-in gate protection diode.

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Published: Apr 8, 2005 |