Part number: SGM2013N
Manufacturer: Sony Corporation
File Size: 54.89KB
Download: 📄 Datasheet
Description: GaAs N-channel Dual-Gate MES FET
Part number: SGM2013N
Manufacturer: Sony Corporation
File Size: 54.89KB
Download: 📄 Datasheet
Description: GaAs N-channel Dual-Gate MES FET
* Ultra-small package
* Low voltage operation
* Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
* High gain Ga = 18dB (Typ) at 900MHz, Ga.
including cellular/cordless phone. Features
* Ultra-small package
* Low voltage operation
* Low noise NF = 1.
The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features
* Ultra-small package
* Low voltage operation
* Lo.
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