SGM2013N Datasheet, Fet, Sony Corporation

✔ SGM2013N Features

Ultra-small package
Low voltage operation
Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at

✔ SGM2013N Application

including cellular/cordless phone. Features
Ultra-small package
Low voltage operation
Low noise NF = 1

PDF File Details

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Part number:

SGM2013N

Manufacturer:

Sony Corporation

File Size:

54.89 KB

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📄 Datasheet

Description:

Gaas n-channel dual-gate mes fet. The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of ap

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SGM2013N GaAs N-channel Dual-Gate MES FET Sony Corporation