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SGM2014AN - GaAs N-channel Dual-Gate MES FET

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Sony Corporation

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SGM2014AN GaAs N-channel Dual-Gate MES FET by Sony Corporation - Datasheet Preview — Datasheet preview – SGM2014AN

Datasheet Details

Part number	SGM2014AN
Manufacturer	Sony Corporation
File Size	57.15 KB
Description	GaAs N-channel Dual-Gate MES FET
Datasheet	SGM2014AN Datasheet
Additional preview pages of the SGM2014AN datasheet.

Product details

Description

The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

Features

Ultra small package.
Low voltage operation.
Low noise: NF = 1.5dB (typ. ) at 900MHz.
High gain: Ga = 18dB (typ. ) at 900MHz.
Low cross-modulation.
High stability.
Built-in gate-protection diode.

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Other Datasheets by Sony Corporation

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SGM2016AN - GaAs N-channel Dual-Gate MES FET
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Published: Apr 8, 2005 |