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SGM2014AN Datasheet Gaas N-channel Dual-gate Mes Fet

Manufacturer: Sony Semiconductor Solutions

Overview: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.

General Description

The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

Key Features

  • Ultra small package.
  • Low voltage operation.
  • Low noise: NF = 1.5dB (typ. ) at 900MHz.
  • High gain: Ga = 18dB (typ. ) at 900MHz.
  • Low cross-modulation.
  • High stability.
  • Built-in gate-protection diode.

SGM2014AN Distributor