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SGM2014AN - GaAs N-channel Dual-Gate MES FET

General Description

The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

Key Features

  • Ultra small package.
  • Low voltage operation.
  • Low noise: NF = 1.5dB (typ. ) at 900MHz.
  • High gain: Ga = 18dB (typ. ) at 900MHz.
  • Low cross-modulation.
  • High stability.
  • Built-in gate-protection diode.

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Other Datasheets by Sony Semiconductor Solutions

Part Number Description
SGM2014AM GaAs N-channel Dual-Gate MES FET
SGM2014M GaAs N-channel Dual Gate MES FET
SGM2013N GaAs N-channel Dual-Gate MES FET
SGM2016AM GaAs N-channel Dual-Gate MES FET
SGM2016AN GaAs N-channel Dual-Gate MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Ultra small package • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz • High gain: Ga = 18dB (typ.