SGM2014AN Overview
The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
SGM2014AN Key Features
- Ultra small package
- Low voltage operation
- Low noise: NF = 1.5dB (typ.) at 900MHz
- High gain: Ga = 18dB (typ.) at 900MHz
- Low cross-modulation
- High stability
- Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate m