SGM2016AM Datasheet | Sony Semiconductor Solutions

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features - Low voltage operation - Low noise NF = 1.2dB (typ.) at 900MHz - High gain Ga = 21dB (typ.) at 900MHz - High stability - Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor...