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SGM2016AP - GaAs N-channel Dual-Gate MES FET

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Sony Corporation

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SGM2016AP GaAs N-channel Dual-Gate MES FET by Sony Corporation - Datasheet Preview — Datasheet preview – SGM2016AP

Datasheet Details

Part number	SGM2016AP
Manufacturer	Sony Corporation
File Size	61.49 KB
Description	GaAs N-channel Dual-Gate MES FET
Datasheet	SGM2016AP Datasheet
Additional preview pages of the SGM2016AP datasheet.

Product details

Description

The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

Features

Low voltage operation.
Low noise NF = 1.2dB (typ. ) at 900MHz.
High gain Ga = 21dB (typ. ) at 900MHz.
High stability.
Built-in gate protection diode.

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Other Datasheets by Sony Corporation

SGM2016AM - GaAs N-channel Dual-Gate MES FET
SGM2016AN - GaAs N-channel Dual-Gate MES FET
SGM2016M - GaAs N-channel Dual-Gate MES FET
SGM2016P - GaAs N-channel Dual-Gate MES FET
SGM2013N - GaAs N-channel Dual-Gate MES FET
SGM2014AM - GaAs N-channel Dual-Gate MES FET

Published: Apr 8, 2005 |