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SGM2016AP - GaAs N-channel Dual-Gate MES FET

General Description

The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

Key Features

  • Low voltage operation.
  • Low noise NF = 1.2dB (typ. ) at 900MHz.
  • High gain Ga = 21dB (typ. ) at 900MHz.
  • High stability.
  • Built-in gate protection diode.

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Other Datasheets by Sony Semiconductor Solutions

Part Number Description
SGM2016AM GaAs N-channel Dual-Gate MES FET
SGM2016AN GaAs N-channel Dual-Gate MES FET
SGM2016M GaAs N-channel Dual-Gate MES FET
SGM2016P GaAs N-channel Dual-Gate MES FET
SGM2013N GaAs N-channel Dual-Gate MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.