SGM2013N
Overview
- Ultra-small package
- Low voltage operation
- Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
- High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
- High stability
- Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C)
- Drain to source voltage VDSX 6
- Gate 1 to source voltage VG1S -4
- Gate 2 to source voltage VG2S -4
- Drain current ID 18
