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SGM2014AM - GaAs N-channel Dual-Gate MES FET

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Sony Corporation

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SGM2014AM GaAs N-channel Dual-Gate MES FET by Sony Corporation - Datasheet Preview — Datasheet preview – SGM2014AM

Datasheet Details

Part number	SGM2014AM
Manufacturer	Sony Corporation
File Size	51.60 KB
Description	GaAs N-channel Dual-Gate MES FET
Datasheet	SGM2014AM Datasheet
Additional preview pages of the SGM2014AM datasheet.

Product details

Description

The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

Features

Low voltage operation.
Low noise: NF = 1.5dB (typ. ) at 900MHz.
High gain: Ga = 18dB (typ. ) at 900MHz.
Low cross-modulation.
High stability.
Built-in gate-protection diode.

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Published: Apr 8, 2005 |