SGM2014AM
SGM2014AM is GaAs N-channel Dual-Gate MES FET manufactured by Sony Semiconductor Solutions.
GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features
- Low voltage operation
- Low noise: NF = 1.5dB (typ.) at 900MHz
- High gain: Ga = 18dB (typ.) at 900MHz
- Low cross-modulation
- High stability
- Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor...
