SGM2016AM GaAs N-channel Dual-Gate MES FET

Sony Corporation

Description

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office..
The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

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Datasheet Specifications

Part number: SGM2016AM
Manufacturer: Sony Corporation
File Size: 61.49 KB
Datasheet: SGM2016AM_SonyCorporation.pdf
Description: GaAs N-channel Dual-Gate MES FET

Features

* Low voltage operation
* Low noise NF = 1.2dB (typ. ) at 900MHz
* High gain Ga = 21dB (typ. ) at 900MHz
* High stability

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SGM2016AM GaAs N-channel Dual-Gate MES FET Sony Corporation

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