Part number: SGM2016AM
Manufacturer: Sony Corporation
File Size: 61.49KB
Download: 📄 Datasheet
Description: GaAs N-channel Dual-Gate MES FET
* Low voltage operation
* Low noise NF = 1.2dB (typ.) at 900MHz
* High gain Ga = 21dB (typ.) at 900MHz
* High stability
* Built-in gate protection dio.
including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features
* Low voltage operation
* Low .
The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features
* Low voltage op.
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