SGM2016AM Datasheet, Fet, Sony Corporation

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Part number:

SGM2016AM

Manufacturer:

Sony Corporation

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61.49 KB

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📄 Datasheet

Description:

Gaas n-channel dual-gate mes fet. The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range o

✔ SGM2016AM Features

Low voltage operation
Low noise NF = 1.2dB (typ.) at 900MHz
High gain Ga = 21dB (typ.) at 900MHz
High stability
Built-in gate protection diode Application UHF-b

✔ SGM2016AM Application

including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features
Low voltage operation

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SGM2016AM GaAs N-channel Dual-Gate MES FET Sony Corporation