SGM2014AM Datasheet, Mes Fet, Sony Corporation

Gaas n-channel dual-gate mes fet

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Part number:

SGM2014AM

Manufacturer:

Sony Corporation

File Size:

51.60 KB

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Description:

Gaas n-channel dual-gate mes fet.
The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.
This FET is suitable fowi.

✔ SGM2014AM Features

Low voltage operation
Low noise: NF = 1.5dB (typ.) at 900MHz
High gain: Ga = 18dB (typ.) at 900MHz
Low cross-modulation
High stability
Built-in gate-protectio

✔ SGM2014AM Application

including TV tuners, cellular radios, and DBS IF amplifiers. Features
Low voltage operation
Low noise: N

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SGM2014AM GaAs N-channel Dual-Gate MES FET Sony Corporation