SGM2014AM GaAs N-channel Dual-Gate MES FET

Sony Corporation

Description

SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office..
The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

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Datasheet Specifications

Part number: SGM2014AM
Manufacturer: Sony Corporation
File Size: 51.60 KB
Datasheet: SGM2014AM_SonyCorporation.pdf
Description: GaAs N-channel Dual-Gate MES FET

Features

* Low voltage operation
* Low noise: NF = 1.5dB (typ. ) at 900MHz
* High gain: Ga = 18dB (typ. ) at 900MHz
* Low cross-modulation
* High stability

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SGM2014AM GaAs N-channel Dual-Gate MES FET Sony Corporation

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