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SGM2016AN Datasheet - Sony Corporation

GaAs N-channel Dual-Gate MES FET

SGM2016AN Features

* Ultra-small package

* Low voltage operation

* Low noise NF = 1.2dB (typ.) at 900MHz

* High gain Ga = 21dB (typ.) at 900MHz

* High stability

* Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structur

SGM2016AN Datasheet (56.22 KB)

Preview of SGM2016AN PDF

Datasheet Details

Part number:

SGM2016AN

Manufacturer:

Sony Corporation

File Size:

56.22 KB

Description:

Gaas n-channel dual-gate mes fet.

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SGM2016AN GaAs N-channel Dual-Gate MES FET Sony Corporation

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