SGM2016AN Datasheet, Fet, Sony Corporation

✔ SGM2016AN Features

Ultra-small package
Low voltage operation
Low noise NF = 1.2dB (typ.) at 900MHz
High gain Ga = 21dB (typ.) at 900MHz
High stability
Built-in gate protection d

✔ SGM2016AN Application

including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features
Ultra-small package
Lo

PDF File Details

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Part number:

SGM2016AN

Manufacturer:

Sony Corporation

File Size:

56.22 KB

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📄 Datasheet

Description:

Gaas n-channel dual-gate mes fet. The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of a

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SGM2016AN GaAs N-channel Dual-Gate MES FET Sony Corporation