NE25139 DUAL-GATE GaAS MESFET

NEC

Description

GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) .
The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.

📥 Download Datasheet

NE25139 Datasheet Preview — Preview of NE25139 PDF

Datasheet Specifications

Part number: NE25139
Manufacturer: NEC
File Size: 482.76 KB
Datasheet: NE25139_NEC.pdf
Description: DUAL-GATE GaAS MESFET

Features

* SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
* LOW CRSS: 0.02 pF (TYP)
* HIGH GPS: 20 dB (TYP) AT 900 MHz
* LOW NF: 1.1 dB TYP AT 900 MHz
* LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
* ION IMPLANTATION
* AVAILABLE IN TAPE & REEL OR BULK DESCRIP

NE25139 Distributors

📁 Related Datasheet

NE2001-VA20 NE2001-VA20A NE2002-VA10A NE2004-VA10A NE202930 NE21935

📌 All Tags

NE25139 DUAL-GATE GaAS MESFET NEC

NEC NE25139-like datasheet