NE25139 Datasheet - NEC

DUAL-GATE GaAS MESFET

NE25139 Features

* SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER

* LOW CRSS: 0.02 pF (TYP)

* HIGH GPS: 20 dB (TYP) AT 900 MHz

* LOW NF: 1.1 dB TYP AT 900 MHz

* LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

* ION IMPLANTATION

* AVAILABLE IN TAPE & REEL OR BULK DESCRIP

NE25139 General Description

The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surfac.

NE25139 Datasheet (482.76 KB)

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Datasheet Details

Part number:

NE25139

Manufacturer:

NEC

File Size:

482.76 KB

Description:

Dual-gate gaas mesfet.

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NE25139 DUAL-GATE GaAS MESFET NEC

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NE25139 Features

NE25139 General Description

Datasheet Details

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