NE25139 Datasheet (NEC) - DUAL-GATE GaAS MESFET

NE25139, DUAL-GATE GaAS MESFET

The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.

As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs.

This device is available in a mini-mold (surfac

NE25139 Features

* SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER

* LOW CRSS: 0.02 pF (TYP)

* HIGH GPS: 20 dB (TYP) AT 900 MHz

* LOW NF: 1.1 dB TYP AT 900 MHz

* LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

* ION IMPLANTATION

* AVAILABLE IN TAPE & REEL OR BULK DESCRIP