NE25139
NEC
482.76kb
Dual-gate gaas mesfet. The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifie
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GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP.
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NE2001-VA20 - Near edge thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thermal printhead (8 dots / mm)
NE2001-VA20A
The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.
NE2001-VA20A - Near edge thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thermal printhead (8 dots / mm)
NE2001-VA20A
The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medi.
NE2002-VA10A - Near edge thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thermal printhead (8 dots / mm)
NE2002-VA10A
The NE2002–VA10A is a near edge thin–film thermal printhead, where the printing med.
NE2004-VA10A - Near edge thin film thermal printhead (8 dots / mm)
(Rohm)
Printheads
Near edge thin film thermal printhead (8 dots / mm)
NE2004-VA10A
The NE2004–VA10A is a near edge thin–film thermal printhead, where the pr.
NE202 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
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NE20248 - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
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NE20283A - ULTRA LOW NOISE K BAND HETERO JUNCTION FET
(NEC)
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