NE25118 DUAL-GATE GaAS MESFET

NEC

Description

GENERAL PURPOSE DUAL-GATE GaAS MESFET .
The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.

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Datasheet Specifications

Part number: NE25118
Manufacturer: NEC
File Size: 45.85 KB
Datasheet: NE25118_NEC.pdf
Description: DUAL-GATE GaAS MESFET

Features

* SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
* LOW CRSS: 0.02 pF (TYP)
* HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz
* LOW NF: 1.1 dB TYP AT 900 MHz
* LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
* ION IMPLANTATION
* AVAILABLE IN TAPE & REEL OR BULK

Applications

* Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1

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NE25118 DUAL-GATE GaAS MESFET NEC

NEC NE25118-like datasheet