GaAS Datasheet | Specifications & PDF Download

GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

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CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

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PRELIMINARY MXP4000 Series OPTO ELECTRONIC PRODUCTS InGaAs/InP PIN Photodiode Chips P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi

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www.DataSheet4U.com Matched GaAs SPST Switch 5 - 3000 MHZ Features q q q q SW-215/216 V2.00 DI-1 0.87 (22.1 Ϯ 0.5) CTL RF 1 Low Insertion Loss, 1.

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50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre

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Max. Input Power HG-0711 Absolute Maximum Ratings Item Symbol Conditions Max. Input Voltage Max.Input Power P Operating Temp. Range Topr Storage

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< High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schot

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NJG1508F SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1508F is a GaAs SPDT switch MMIC which features low loss, high isolation and low control curren

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www.DataSheet4U.com Matched GaAs SPST Switch DC - 3 GHz Features q q q SW-209 V 2.00 CR-3 Fast Switching Speed, 6 ns Typical Ultra Low DC Power Co

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MMS008AA Datasheet DC–8 GHz GaAs MMIC SP4T Non-Reflective Switch DC–8 GHz GaAs MMIC SP4T Non-Reflective Switch Microsemi Corporate Headquarters One

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 ø2.5±0.2 6.0±0.2 1.0 Not soldered Unit : mm 4.

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PO Box 366, 435 Route 206N, Newton, NJ 07860 Ph (973) 579-7227, Fax (973) 300-3600, http://www.thorlabs.com D400FC InGaAs Fiber Optic Photo Detector

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HG-0114 Shipped in packet-tape reel(5,000pcs per reel) Notice : It is requested to read and accept IMPORTANT NOTICE written on the back of the front

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62033 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE (TYPE GS5040) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • Hermetically sealed High output

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