MGF0905A Datasheet, Fet, Mitsubishi

MGF0905A Features

  • Fet
  • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
  • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
  • High power added efficiency P.A.E=40%(TYP.) @f=

PDF File Details

Part number:

MGF0905A

Manufacturer:

Mitsubishi

File Size:

435.92kb

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📄 Datasheet

Description:

High-power gaas fet. The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES

  • High output pow

  • Datasheet Preview: MGF0905A 📥 Download PDF (435.92kb)
    Page 2 of MGF0905A Page 3 of MGF0905A

    TAGS

    MGF0905A
    High-power
    GaAs
    FET
    Mitsubishi

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    Stock and price

    Mitsubishi Electric
    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
    ComSIT USA
    MGF0905A01
    816 In Stock
    0
    Unit Price : $0
    No Longer Stocked
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