MGF0905A High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched .
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. High output power Po=34.

📥 Download Datasheet

MGF0905A Datasheet Preview — Preview of MGF0905A PDF

Datasheet Specifications

Part number: MGF0905A
Manufacturer: Mitsubishi
File Size: 435.92 KB
Datasheet: MGF0905A_MitsubishiElectricSemiconductor.pdf
Description: High-power GaAs FET

Features

* High output power Po=34.0dBm(TYP. ) @f=1.65GHz,Pin=26dBm
* High power gain Gp=8.0dB(TYP. ) @f=1.65GHz,Pin=26dBm

MGF0905A Distributors

📁 Related Datasheet

MGF0912A MGF0913A MGF0915A MGF0916A MGF0917A MGF0951P

📌 All Tags

MGF0905A High-power GaAs FET Mitsubishi

Mitsubishi MGF0905A-like datasheet