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MGF0951P L & S BAND GaAs FET

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Description

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] .
The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. High output power Po=31dBm(TYP.

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Datasheet Specifications

Part number
MGF0951P
Manufacturer
Mitsubishi Electric
File Size
1.22 MB
Datasheet
MGF0951P_MitsubishiElectric.pdf
Description
L & S BAND GaAs FET

Features

* High output power Po=31dBm(TYP. ) @f=2.15GHz,Pin=20dBm
* High power gain Glp=13dB(TYP. ) @f=2.15GHz
* High power added efficiency ηadd=50%(TYP. ) @f=2.15GHz,Pin=20dBm

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