MGF0915A L & S BAND GaAs FET

Mitsubishi Electric

Description

MITSUBISHI SEMICONDUCTOR MGF0915A L & S BAND GaAs FET [ SMD non - matched ] .
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. High output power Po=36.

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Datasheet Specifications

Part number: MGF0915A
Manufacturer: Mitsubishi Electric
File Size: 1.30 MB
Datasheet: MGF0915A_MitsubishiElectric.pdf
Description: L & S BAND GaAs FET

Features

* High output power Po=36.5 dBm(TYP. ) @f=1.9GHz,Pin=23dBm
* High power gain Gp=14.5 dB(TYP. ) @f=1.9GHz
* High power added efficiency ηadd=50 %(TYP. ) @f=1.9GHz,Pin=23dBm

MGF0915A Distributors

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MGF0915A BAND GaAs FET Mitsubishi Electric

Mitsubishi Electric MGF0915A-like datasheet