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MGF0952P L & S BAND GaAs FET

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Description

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] .
The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. High output power Po=36.

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Datasheet Specifications

Part number
MGF0952P
Manufacturer
Mitsubishi Electric
File Size
1.39 MB
Datasheet
MGF0952P_MitsubishiElectric.pdf
Description
L & S BAND GaAs FET

Features

* High output power Po=36.5dBm(TYP. ) @f=2.15GHz,Pin=25Bm
* High power gain Glp=13.5dB(TYP. ) @f=2.15GHz
* High power added efficiency ηadd=50%(TYP. ) @f=2.15GHz,Pin=25dBm

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