MGF0904A Datasheet, Fet, Mitsubishi

MGF0904A Features

  • Fet
  • High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
  • High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
  • High power added efficiency P.A.E=40%(TYP.) @f

PDF File Details

Part number:

MGF0904A

Manufacturer:

Mitsubishi

File Size:

442.41kb

Download:

📄 Datasheet

Description:

High-power gaas fet. The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES

  • High output

  • Datasheet Preview: MGF0904A 📥 Download PDF (442.41kb)
    Page 2 of MGF0904A Page 3 of MGF0904A

    MGF0904A Application

    • Applications FEATURES
    • High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
    • High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15

    TAGS

    MGF0904A
    High-power
    GaAs
    FET
    Mitsubishi

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    Stock and price

    Mitsubishi Electric
    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
    ComSIT USA
    MGF0904A01
    2175 In Stock
    0
    Unit Price : $0
    No Longer Stocked
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