MGF0904A High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched .
The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. High output power Po=28.

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Datasheet Specifications

Part number: MGF0904A
Manufacturer: Mitsubishi
File Size: 442.41 KB
Datasheet: MGF0904A-Mitsubishi.pdf
Description: High-power GaAs FET

Features

* High output power Po=28.0dBm(TYP. ) @f=1.65GHz,Pin=15dBm
* High power gain Gp=13.0dB(TYP. ) @f=1.65GHz,Pin=15dBm

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MGF0904A High-power GaAs FET Mitsubishi

Mitsubishi MGF0904A-like datasheet