MGF0917A Datasheet, Fet, Mitsubishi Electric

MGF0917A Features

• Fet
• High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
• High power gain Gp=21dB(TYP.) @f=1.9GHz
• High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=4dBm <

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Part number:

MGF0917A

Manufacturer:

Mitsubishi Electric

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73.54kb

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📄 Datasheet

Description:

L & s band gaas fet. The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES

High output power

MGF0917A Application

• Applications Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or u

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MGF0917A

Mitsubishi Electric

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