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MGF0917A - L & S BAND GaAs FET

Mitsubishi Electric

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Datasheet Details

Part number	MGF0917A
Manufacturer	Mitsubishi Electric
File Size	73.54 KB
Description	L & S BAND GaAs FET
Datasheet	MGF0917A_MitsubishiElectric.pdf

MGF0917A Product details

Description

The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Features

High output power Po=24dBm(TYP. ) @f=1.9GHz,Pin=4dBm.
High power gain Gp=21dB(TYP. ) @f=1.9GHz.
High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=4dBm.
Hermetic Package.

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Published: Jul 2, 2007 |