MGF0917A L & S BAND GaAs FET

Mitsubishi Electric

Description

MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non * matched ] .
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. High output power Po=24dBm(TYP.

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Datasheet Specifications

Part number: MGF0917A
Manufacturer: Mitsubishi Electric
File Size: 73.54 KB
Datasheet: MGF0917A_MitsubishiElectric.pdf
Description: L & S BAND GaAs FET

Features

* High output power Po=24dBm(TYP. ) @f=1.9GHz,Pin=4dBm
* High power gain Gp=21dB(TYP. ) @f=1.9GHz
* High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=4dBm

Applications

* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

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MGF0917A BAND GaAs FET Mitsubishi Electric

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