Datasheet Details
Part number:
MGF0919A
Manufacturer:
Mitsubishi
File Size:
43.04 KB
Description:
L & S BAND GaAs FET [ SMD non matched ]
Features
* High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
* High power gain Gp=19dB(TYP.) @f=1.9GHz
* High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
* Hermetic Package APPLICATION
* For UHF Band power amplifiers Fig.1 QUALITY
* GG RECO
