MGF0919A L & S BAND GaAs FET [ SMD non matched ]

Mitsubishi

Description

MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non * matched ] .
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. High output power Po=30dBm(TYP.

📥 Download Datasheet

MGF0919A Datasheet Preview — Preview of MGF0919A PDF

Datasheet Specifications

Part number: MGF0919A
Manufacturer: Mitsubishi
File Size: 43.04 KB
Datasheet: MGF0919A_MitsubishiElectricSemiconductor.pdf
Description: L & S BAND GaAs FET [ SMD non matched ]

Features

* High output power Po=30dBm(TYP. ) @f=1.9GHz,Pin=12dBm
* High power gain Gp=19dB(TYP. ) @f=1.9GHz
* High power added efficiency ηadd=37%(TYP. ) @f=1.9GHz,Pin=12dBm

Applications

* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

MGF0919A Distributors

📁 Related Datasheet

MGF0912A MGF0913A MGF0915A MGF0916A MGF0917A MGF0951P

📌 All Tags

MGF0919A BAND GaAs FET SMD non matched Mitsubishi

Mitsubishi MGF0919A-like datasheet