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MGF0919A Datasheet - Mitsubishi

MGF0919A L & S BAND GaAs FET [ SMD non matched ]

MGF0919A Features

* High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm

* High power gain Gp=19dB(TYP.) @f=1.9GHz

* High power added efficiency ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm

* Hermetic Package APPLICATION

* For UHF Band power amplifiers Fig.1 QUALITY

* GG RECO

Datasheet Details

MGF0919A

Mitsubishi

43.04 KB

L & s band gaas fet [ smd non matched ].

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Stock and price

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VAVC-F12-SCD-32-T

0 In Stock

Qty : 1 units

Unit Price : $285.27

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MGF0919A BAND GaAs FET SMD non matched Mitsubishi

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