MGF0918A Datasheet, ], Mitsubishi

✔ MGF0918A Features

High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
High power gain Gp=20dB(TYP.) @f=1.9GHz
High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
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Part number:

MGF0918A

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Mitsubishi

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📄 Datasheet

Description:

L & s band gaas fet [ smd non - matched ]. The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR

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MGF0918A BAND GaAs FET SMD non matched Mitsubishi