MGF0918A L & S BAND GaAs FET [ SMD non - matched ]

Mitsubishi

Description

Preliminary .
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

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Datasheet Specifications

Part number: MGF0918A
Manufacturer: Mitsubishi
File Size: 86.85 KB
Datasheet: MGF0918A_MitsubishiElectricSemiconductor.pdf
Description: L & S BAND GaAs FET [ SMD non - matched ]

Features

* High output power Po=27dBm(TYP. ) @f=1.9GHz,Pin=8dBm
* High power gain Gp=20dB(TYP. ) @f=1.9GHz
* High power added efficiency hadd=45%(TYP. ) @f=1.9GHz,Pin=8dBm

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MGF0918A BAND GaAs FET SMD non matched Mitsubishi

Mitsubishi MGF0918A-like datasheet