Datasheet Details
Part number:
MGF0918A
Manufacturer:
Mitsubishi
File Size:
86.85 KB
Description:
L & S BAND GaAs FET [ SMD non - matched ]
Features
* High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
* High power gain Gp=20dB(TYP.) @f=1.9GHz
* High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
* Hermetic Package APPLICATION
* For UHF Band power amplifiers Fig.1 QUALITY
* GG RECOMMENDED BIAS CONDITIONS
