Datasheet Details
Part number:
MGF0906B
Manufacturer:
Mitsubishi
File Size:
743.08 KB
Description:
High-power GaAs FET
Features
* Class A operation
* High output power P1dB=37.0dBm(T.Y.P) @f=2.3GHz
* High power gain GLP=11.0dB(TYP.) @f=2.3GHz
* High power added efficiency P.A.E=40%(TYP.) @f=2.3GHz,P1dB
* Hermetically sealed metal-ceramic package with ceramic lid APPLICATION
