MGF0906B High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched .
The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications. Class A operation. Hig.

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Datasheet Specifications

Part number: MGF0906B
Manufacturer: Mitsubishi
File Size: 743.08 KB
Datasheet: MGF0906B_MitsubishiElectricSemiconductor.pdf
Description: High-power GaAs FET

Features

* Class A operation
* High output power P1dB=37.0dBm(T. Y. P) @f=2.3GHz
* High power gain GLP=11.0dB(TYP. ) @f=2.3GHz
* High power added efficiency P. A. E=40%(TYP. ) @f=2.3GHz,P1dB

MGF0906B Distributors

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MGF0906B High-power GaAs FET Mitsubishi

Mitsubishi MGF0906B-like datasheet