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MGF0906B - High-power GaAs FET

Mitsubishi

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Datasheet Details

Part number	MGF0906B
Manufacturer	Mitsubishi
File Size	743.08 KB
Description	High-power GaAs FET
Datasheet	MGF0906B_MitsubishiElectricSemiconductor.pdf

MGF0906B Product details

Description

The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.

Features

Class A operation.
High output power P1dB=37.0dBm(T. Y. P) @f=2.3GHz.
High power gain GLP=11.0dB(TYP. ) @f=2.3GHz.
High power added efficiency P. A. E=40%(TYP. ) @f=2.3GHz,P1dB.
Hermetically sealed metal-ceramic package with ceramic lid.

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Published: Apr 29, 2005 |