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MGF0909A - L /S BAND POWER GaAs FET

Mitsubishi

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Datasheet Details

Part number	MGF0909A
Manufacturer	Mitsubishi
File Size	22.93 KB
Description	L /S BAND POWER GaAs FET
Datasheet	MGF0909A_MitsubishiElectricSemiconductor.pdf

MGF0909A Product details

Description

The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

Features

High output power P1dB=38dBm(TYP. ).
High power gain GLP=11dB(TYP. ).
High power added efficiency ηadd=45%(TYP. ) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.6±0.2 ø2.2 3.

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Published: Apr 29, 2005 |