MGF0909A L /S BAND POWER GaAs FET

Mitsubishi

Description

MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET .
The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

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Datasheet Specifications

Part number: MGF0909A
Manufacturer: Mitsubishi
File Size: 22.93 KB
Datasheet: MGF0909A_MitsubishiElectricSemiconductor.pdf
Description: L /S BAND POWER GaAs FET

Features

* High output power P1dB=38dBm(TYP. )
* High power gain GLP=11dB(TYP. )

MGF0909A Distributors

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MGF0909A BAND POWER GaAs FET Mitsubishi

Mitsubishi MGF0909A-like datasheet