Datasheet Details
Part number:
MGF0909A
Manufacturer:
Mitsubishi
File Size:
22.93 KB
Description:
L /S BAND POWER GaAs FET
Features
* High output power P1dB=38dBm(TYP.)
* High power gain GLP=11dB(TYP.)
* High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.6±0.2 ø2.2 3 APPLICATION For UHF Band power amplifiers 5.0 QUALITY GRADE
* GG RECOMMEND
