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MGF0953P - High-power GaAs FET

Mitsubishi Electric

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Datasheet Details

Part number	MGF0953P
Manufacturer	Mitsubishi Electric
File Size	140.45 KB
Description	High-power GaAs FET
Datasheet	MGF0953P_MitsubishiElectric.pdf

MGF0953P Product details

Description

The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Features

High output power Po=28.0dBm(TYP. ) @f=2.15GHz,Pin=10dBm.
High power gain Gp=16.5dB(TYP. ) @f=2.15GHz.
High power added efficiency add=40%(TYP. ) @f=2.15GHz,Pin=10dBm.
Plastic Mold Lead.
less Package.

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Published: Jul 4, 2007 |