MGF0953P High-power GaAs FET

Mitsubishi Electric

Description

< High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched .
The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. High output power Po=28.

📥 Download Datasheet

MGF0953P Datasheet Preview — Preview of MGF0953P PDF

Datasheet Specifications

Part number: MGF0953P
Manufacturer: Mitsubishi Electric
File Size: 140.45 KB
Datasheet: MGF0953P_MitsubishiElectric.pdf
Description: High-power GaAs FET

Features

* High output power Po=28.0dBm(TYP. ) @f=2.15GHz,Pin=10dBm
* High power gain Gp=16.5dB(TYP. ) @f=2.15GHz
* High power added efficiency add=40%(TYP. ) @f=2.15GHz,Pin=10dBm
* Plastic Mold Lead

MGF0953P Distributors

📁 Related Datasheet

MGF0904A MGF0905A MGF0906B MGF0907B MGF0909A MGF0910A

📌 All Tags

MGF0953P High-power GaAs FET Mitsubishi Electric

Mitsubishi Electric MGF0953P-like datasheet