MGF0907B High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF0907B L & S BAND /10W non - matched .
The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use L & S band applications. Class A operation.

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Datasheet Specifications

Part number: MGF0907B
Manufacturer: Mitsubishi
File Size: 657.59 KB
Datasheet: MGF0907B_MitsubishiElectricSemiconductor.pdf
Description: High-power GaAs FET

Features

* Class A operation
* High output power P1dB=40.0dBm(T. Y. P) @f=2.3GHz
* High power gain GLP=10.0dB(TYP. ) @f=2.3GHz
* High power added efficiency P. A. E=37%(TYP. ) @f=2.3GHz,P1dB

MGF0907B Distributors

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MGF0907B High-power GaAs FET Mitsubishi

Mitsubishi MGF0907B-like datasheet