MGF0907B

High-power GaAs FET

Mitsubishi

* Class A operation

* High output power P1dB=40.0dBm(T.Y.P) @f=2.3GHz

* High power gain GLP=10.0dB(TYP.) @f=2.3GHz

* High power added efficiency P.A.E=37%(TYP.) @f=2.3GHz,P1dB

* Hermetically sealed metal-ceramic package with ceramic lid APPLICATION

MGF0907B

Mitsubishi

657.59 KB

High-power gaas fet.

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MGF0907B High-power GaAs FET Mitsubishi

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