MGF0910A

High-power GaAs FET

Mitsubishi

* Class A operation

* High output power P1dB=38.0dBm(T.Y.P) @f=2.3GHz

* High power gain GLP=11.0dB(TYP.) @f=2.3GHz

* High power added efficiency P.A.E=45%(TYP.) @f=2.3GHz,P1dB

* Hermetically sealed metal-ceramic package with ceramic lid APPLICATION

* F

MGF0910A

Mitsubishi

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High-power gaas fet.

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MGF0910A High-power GaAs FET Mitsubishi

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