Datasheet4U.com

MGF0910A - High-power GaAs FET

Mitsubishi

📥 Download Datasheet

MGF0910A Datasheet Preview — Preview of MGF0910A PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	MGF0910A
Manufacturer	Mitsubishi
File Size	537.65 KB
Description	High-power GaAs FET
Datasheet	MGF0910A_MitsubishiElectricSemiconductor.pdf

MGF0910A Product details

Description

The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.

Features

Class A operation.
High output power P1dB=38.0dBm(T. Y. P) @f=2.3GHz.
High power gain GLP=11.0dB(TYP. ) @f=2.3GHz.
High power added efficiency P. A. E=45%(TYP. ) @f=2.3GHz,P1dB.
Hermetically sealed metal-ceramic package with ceramic lid.

📁 MGF0910A Similar Datasheet

MGF0912A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0913A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0915A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0916A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0917A - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0951P - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0952P - L & S BAND GaAs FET (Mitsubishi Electric)
MGF0953P - High-power GaAs FET (Mitsubishi Electric)

Other Datasheets by Mitsubishi

MGF0911A - L / S BAND POWER GaAs FET
MGF0918A - L & S BAND GaAs FET [ SMD non - matched ]
MGF0919A - L & S BAND GaAs FET [ SMD non matched ]
MGF0904A - High-power GaAs FET
MGF0905A - High-power GaAs FET
MGF0906B - High-power GaAs FET

Published: Apr 29, 2005 |