MGF0910A High-power GaAs FET

Mitsubishi

Description

< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched .
The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. Class A operation. High.

📥 Download Datasheet

MGF0910A Datasheet Preview — Preview of MGF0910A PDF

Datasheet Specifications

Part number: MGF0910A
Manufacturer: Mitsubishi
File Size: 537.65 KB
Datasheet: MGF0910A_MitsubishiElectricSemiconductor.pdf
Description: High-power GaAs FET

Features

* Class A operation
* High output power P1dB=38.0dBm(T. Y. P) @f=2.3GHz
* High power gain GLP=11.0dB(TYP. ) @f=2.3GHz
* High power added efficiency P. A. E=45%(TYP. ) @f=2.3GHz,P1dB

MGF0910A Distributors

📁 Related Datasheet

MGF0912A MGF0913A MGF0915A MGF0916A MGF0917A MGF0951P

📌 All Tags

MGF0910A High-power GaAs FET Mitsubishi

Mitsubishi MGF0910A-like datasheet