Datasheet Details
Part number:
MGF0911A
Manufacturer:
Mitsubishi
File Size:
23.00 KB
Description:
L / S BAND POWER GaAs FET
Features
* Class A operation
* High output power P1dB=41dBm(TYP)
* High power gain GLP=11dB(TYP)
* High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB
* Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLI
