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MGF0911A Datasheet - Mitsubishi

MGF0911A L / S BAND POWER GaAs FET

MGF0911A Features

* Class A operation

* High output power P1dB=41dBm(TYP)

* High power gain GLP=11dB(TYP)

* High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB

* Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLI

MGF0911A_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGF0911A

Manufacturer:

Mitsubishi

File Size:

23.00 KB

Description:

L / s band power gaas fet.

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MGF0911A MGF0911A BAND POWER GaAs FET Mitsubishi

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