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MGF0911A - L / S BAND POWER GaAs FET

Mitsubishi

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Datasheet Details

Part number	MGF0911A
Manufacturer	Mitsubishi
File Size	23.00 KB
Description	L / S BAND POWER GaAs FET
Datasheet	MGF0911A_MitsubishiElectricSemiconductor.pdf

MGF0911A Product details

Description

The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

Features

Class A operation.
High output power P1dB=41dBm(TYP).
High power gain GLP=11dB(TYP).
High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB.
Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4.

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Published: Apr 29, 2005 |