MGF0911A L / S BAND POWER GaAs FET

Mitsubishi

Description

MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET .
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

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Datasheet Specifications

Part number: MGF0911A
Manufacturer: Mitsubishi
File Size: 23.00 KB
Datasheet: MGF0911A_MitsubishiElectricSemiconductor.pdf
Description: L / S BAND POWER GaAs FET

Features

* Class A operation
* High output power P1dB=41dBm(TYP)
* High power gain GLP=11dB(TYP)
* High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB
* Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLI

MGF0911A Distributors

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MGF0911A BAND POWER GaAs FET Mitsubishi

Mitsubishi MGF0911A-like datasheet