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MGF0912A - L & S BAND GaAs FET

Mitsubishi Electric

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Datasheet Details

Part number	MGF0912A
Manufacturer	Mitsubishi Electric
File Size	54.04 KB
Description	L & S BAND GaAs FET
Datasheet	MGF0912A_MitsubishiElectric.pdf

MGF0912A Product details

Description

The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Features

High output power Po=41.5dBm(TYP. ) @f=1.9GHz,Pin=33dBm.
High power gain Gp=10.5dB(TYP. ) @f=1.9GHz.
High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=33dBm.
Hermetic Package ‡A ƒÓ2.2 0.6.
}0.2 ‡B ‡A.

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Published: Jul 2, 2007 |