MGF0912A Datasheet, Fet, Mitsubishi Electric

MGF0912A Features

• Fet
• High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
• High power gain Gp=10.5dB(TYP.) @f=1.9GHz
• High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=3

PDF File Details

Part number:

MGF0912A

Manufacturer:

Mitsubishi Electric

File Size:

54.04kb

Download:

📄 Datasheet

Description:

L & s band gaas fet. The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters

MGF0912A Application

• Applications Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or u

TAGS

MGF0912A

Mitsubishi Electric

📁 Related Datasheet

MGF0910A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky.

MGF0911A - L / S BAND POWER GaAs FET (Mitsubishi)
MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designe.

MGF0913A - L & S BAND GaAs FET (Mitsubishi Electric)
MITSUBISHI SEMICONDUCTOR MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Ga.

MGF0915A - L & S BAND GaAs FET (Mitsubishi Electric)
MITSUBISHI SEMICONDUCTOR MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Ga.

MGF0916A - L & S BAND GaAs FET (Mitsubishi Electric)
MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Ga.

MGF0917A - L & S BAND GaAs FET (Mitsubishi Electric)
MITSUBISHI SEMICONDUCTOR MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Ga.

MGF0918A - L & S BAND GaAs FET [ SMD non - matched ] (Mitsubishi)
Preliminary DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR

MGF0919A - L & S BAND GaAs FET [ SMD non matched ] (Mitsubishi)
MITSUBISHI SEMICONDUCTOR MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Ga.

MGF0904A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schot.

MGF0905A - High-power GaAs FET (Mitsubishi)
< High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schot.