NE27200 chip equivalent, c to ka band super low noise amplifier n-channel hj-fet chip.
* Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.2 µm
* Gate Width : Wg = 200 µm
ORD.
FEATURES
* Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
* .
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems,.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 39.82KB)