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NE685M23 - NPN SILICON TRANSISTOR

General Description

The NE685M23 transistor is designed for low noise, high gain, and low cost requirements.

This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications.

Key Features

  • NEW.

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Full PDF Text Transcription for NE685M23 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE685M23. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 FEATURES • NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads a...

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M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M23 0.5 • • 1 0.25 1.0 0.4 DESCRIPTION The NE685M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications.

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