NE685 Datasheet | NEC

.. SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Features - LOW COST - SMALL AND ULTRA SMALL SIZE PACKAGES - LOW VOLTAGE/LOW CURRENT OPERATION - HIGH GAIN BANDWIDTH PRODUCT: f T of 12 GHz - NOISE FIGURES OF 1.5 d B AT 2.0 GHZ NE685 SERIES rs e b m : u E n ot T t n O r . e a N r n p a g E i DESCRIPTION g t S s n e A i e e E d w h s w PL ll o a r e t o o n f a f r d e e o s f c i Th i f h d f t e o d m s n o e e r l f m a s m l o l rec se ca a e l P s: ELECTRICAL CHARACTERISTICS l i a det 8539R NE6 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) NEC's family of high frequency, low cost, surface mount devices are well suited for portable wireless munications and cellular radio applications. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) The NE685 series of high f T (12 GHz) devices is suitable for very low voltage/low current, low noise applications. These products are ideal for applications up to 2.4 GHz where low cost, high gain, low voltage, and low current are prime concerns. 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) (TA = 25°C) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68518 2SC5015 18 NE68519 2SC5010 19 NE68530 2SC4959 30 NE68533 2SC4955 33 NE68539/39R 2SC4957 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX f T NFMIN GNF MAG |S21E|2 h FE ICBO IEBO CRE4 PT RTH(J-A) RTH(J-C) Gain Bandwidth Product at VCE = 3V, IC = 10 m A, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, IC = 3 m A, f = 2.0 GHz Associated Gain at VCE = 3V, IC = 3 m A, f = 2.0 GHz Maximum Available Gain at VCE = 3 V, IC = 10 m A, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC =10 m A, f = 2.0 GHz Forward Current Gain3 at VCE = 3 V, IC = 10 m A Collector Cutoff Current at VCB = 5 V, IE = 0 m A Emitter Cutoff Current at VEB = 1 V, IC = 0 m A Feedback Capacitance at VCB = 3 V, IE = 0 m A, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Ambient) GHz d B d B d B d B 9 12 1.5 8.5 12 11 7 75 2.5 12 1.5...