NE685M03 Datasheet | NEC

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 Features - NEW M03 PACKAGE: - Smallest transistor outline package available - Low profile/0.59 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: f T = 12 GHz LOW NOISE FIGURE: NF = 1.5 d B at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 - - 1.4 ±0.1 0.45 (0.9) 0.45 0.3±0.1 DESCRIPTION The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high f T part is well suited for very low voltage/low current designs for portable wireless munications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 1 0.2±0.1 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS f T NF |S21E|2 h FE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 m A, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 m A, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 10 m A, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 m A Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz µA µA p F 0.4 UNITS GHz d B d B 7 75 MIN NE685M03 2SC5435 M03 TYP 12 1.5 9 140 0.1 0.1 0.7 2.5 MAX California Eastern...