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NE685M03 - NPN SILICON TRANSISTOR

General Description

The NE685M03 transistor is designed for low noise, high gain, and low cost requirements.

This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications.

Key Features

  • NEW M03.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • TK 3 1.4 ±0.1 0.45 (0.9) 0.45 0.3±0.1 DESCRIPTION The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications.