NE685M23 Datasheet | NEC

.. PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 Features - NEW MINIATURE M23 PACKAGE: - World's smallest transistor package footprint - leads are pletely underneath package body - Low profile/0.55 mm package height - Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: f T = 12 GHz LOW NOISE FIGURE: NF = 1.5 d B at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M23 - - DESCRIPTION The NE685M23 transistor is designed for low noise, high gain, and low cost requirements. This high f T part is well suited for very low voltage/low current designs for portable wireless munications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.6 0.15 BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS f T NF |S21E|2 h FE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 m A, f = 2 GHz Noise Figure at VCE = 3 V, IC = 10 m A, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 7 m A, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 m A Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz µA µA p F 0.4 UNITS GHz d B d B 7 75 MIN NE685M23 2SC5652 M23 TYP 12 1.5 10 145 0.1 0.1 0.7 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern...