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  NEC Electronic Components Datasheet  

NP80N04MHE Datasheet

(NP80N04xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04EHE, NP80N04KHE
NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
www.DataSheet4U.coTmhese products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04EHE-E1-AY Note1, 2
NP80N04EHE-E2-AY Note1, 2
NP80N04KHE-E1-AY Note1
NP80N04KHE-E2-AY Note1
NP80N04CHE-S12-AZ Note1, 2
NP80N04DHE-S12-AY Note1, 2
NP80N04MHE-S18-AY Note1
NP80N04NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
Low input capacitance
Ciss = 2200 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14239EJ7V0DS00 (7th edition)
Date Published October 2007 NS
1999, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.


  NEC Electronic Components Datasheet  

NP80N04MHE Datasheet

(NP80N04xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

No Preview Available !

NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (Pulse) Note2
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
www.DataSheet4U.cSoimngle Avalanche Current Note3
Single Avalanche Energy Note3
VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
IAS
EAS
40
±20
±80
±280
1.8
120
175
55 to +175
52/31/13
2.7/96/169
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
2 Data Sheet D14239EJ7V0DS


Part Number NP80N04MHE
Description (NP80N04xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
Maker NEC
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