UPA1716 use equivalent, switching p-channel power mos fet industrial use.
* Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS =
–10 V, ID =
–4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS =
–4.5 V, ID =
&.
of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS =
–10 V, ID =
.
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS =
–10 V, ID =
.
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