UPA1716
Description
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
Key Features
- Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = -4.0 V, ID = -4 A)
- Low Ciss : Ciss = 2100 pF TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
