UPA1716 Datasheet | NEC

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters. FEATURES - Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = - 10 V, ID = - 4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = - 4.5 V, ID = - 4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = - 4.0 V, ID = - 4 A) - Low Ciss : Ciss = 2100 p F TYP. - Built-in G-S protection diode - Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 4 5.37 Max. +0.10 - 0.05 6.0 ±0.3 4.4 0.8 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 0.05 Min. 0.5 ±0.2 0.10 1.27 0.78 Max. 0.40 +0.10 - 0.05 µ PA1716G 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVARENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -...