UPA1721 use equivalent, switching n-channel power mos fet industrial use.
* Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 ±0.3 4.4
+0.
of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on)2.
The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
* Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on)2 = 14.0 mΩ MA.
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