* 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5 1.44 RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) 1.8 MAX. 1 5.37.

of notebook computers and so on. FEATURES
* 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4..

The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management 5 applications of notebook computers and so on. FEATURES
* 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5 1.44 RDS(o.

UPA1720

UPA1721

UPA1722

UPA1723

UPA1724

UPA1725

UPA1727

UPA1728

UPA1700A

UPA1701A

UPA1703

UPA1704

UPA1705