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UPA1726 - N-Channel Power MOSFET

General Description

The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management 5 applications of notebook computers and so on.

Key Features

  • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5 1.44 RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05 RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A).
  • Low Ciss: Ciss = 2700 pF TYP.
  • Built-in G-S protection diodes.
  • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1726 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management 5 applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5 1.44 RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A) • Low Ciss: Ciss = 2700 pF TYP. • Built-in G-S protection diodes • Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.