Datasheet4U Logo Datasheet4U.com

UPA1722 - N-Channel Power MOSFET

Datasheet Summary

Description

The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

Features

  • Low on-resistance 1.8 MAX.
  • Small and surface mount package (Power SOP8) 0.05 MIN.
  • Built-in G-S protection diode 0.15.
  • Low Ciss: Ciss = 980 pF TYP. +0.10.
  • 0.05.
  • RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) 1.44 RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) 1 5.37 MAX. 4 6.0 ±0.3 4.4 0.8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M.

📥 Download Datasheet

Datasheet preview – UPA1722

Datasheet Details

Part number UPA1722
Manufacturer NEC
File Size 65.94 KB
Description N-Channel Power MOSFET
Datasheet download datasheet UPA1722 Datasheet
Additional preview pages of the UPA1722 datasheet.

📁 Similar Datasheet

  • UPA1708G - N-Channel 40V MOSFET (VBsemi)
  • UPA1572 - N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE (Renesas)
  • UPA1855 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR (Renesas)
  • UPA1A102MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A103MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A122MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A152MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A182MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A222MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A272MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1722 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain DESCRIPTION The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance 1.8 MAX. • Small and surface mount package (Power SOP8) 0.05 MIN. • Built-in G-S protection diode 0.15 • Low Ciss: Ciss = 980 pF TYP. +0.10 –0.05 • • • RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) 1.44 RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) 1 5.37 MAX. 4 6.0 ±0.3 4.4 0.8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.
Published: |