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UPA1725 - N-Channel Power MOSFET

General Description

This µPA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.

Key Features

  • 2.5-V gate drive and low on-resistance 1.8 MAX.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 0.05 MIN.
  • Low Ciss : Ciss = 950 pF TYP. 0.15.
  • RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) +0.10.
  • 0.05.
  • 1.44 RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) 1 5.37 MAX. 4 6.0 ±0.3 4.4 0.8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1725 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This µPA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 2,3 4 5,6,7,8 ; ; ; ; Non connection Source Gate Drain FEATURES • 2.5-V gate drive and low on-resistance 1.8 MAX. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.05 MIN. • Low Ciss : Ciss = 950 pF TYP. 0.15 • RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) +0.10 –0.05 • • 1.44 RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) 1 5.37 MAX. 4 6.0 ±0.3 4.4 0.8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.