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UPA1720 - N-Channel Power MOSFET

General Description

The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers.

Key Features

  • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A).
  • Low Ciss : Ciss = 800 pF TYP.
  • Built-in G-S Protection Diode.
  • Small and Surface Mount Package (Power SOP8).

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1720 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management application of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) • Low Ciss : Ciss = 800 pF TYP. • Built-in G-S Protection Diode • Small and Surface Mount Package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µ PA1720G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.