UPA2706GR fet equivalent, switching n- and p-channel power mos fet.
* Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
* Low Ciss: Ciss = 660 pF TYP. (VDS = 1.
of notebook computers.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
* Low .
The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
* Low on-state re.
Image gallery
TAGS
Download (Size : 78.29KB)