UPA2706TP fet equivalent, switching n- and p-channel power mos fet.
* Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
* Low Ciss: Ciss = 660 pF TYP. (VDS = 1.
The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.
ORDERING INFORMATION
PART NUMBER PACKAGE Power HSOP8
µ PA2706TP
FEATURES
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