UPA2727UT1A transistor equivalent, mos field effect transistor.
1
8
0.10 S
0.10 M 0
+0.05 −0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V.
PACKAGE DRAWING (Unit: mm)
1.27
* Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)
0.42 −0.0.
The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.
PACKAGE DRAWING (Unit: mm)
1.27
* Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)
0.42 −0.05
3 4
+0.1
6 5 6 ±0.2 5.4 ±0.2
RDS(on)2 = 15 mΩ .
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