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UPA611TA Datasheet - NEC

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

UPA611TA Features

* Can be driven by a 2.5-V power source

* Low gate cut-off voltage 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4 ORDERING INFORMATION PART NUMBER PACKAGE EQUIVALENT CIRCUIT (1/2 Circuit) µPA611TA Drain SC-74 (Mini Mold) Internal Diode Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to

UPA611TA General Description

The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.65 +0.1 *0.15 0.32 +0.1 *0.05 0..

UPA611TA Datasheet (52.55 KB)

Preview of UPA611TA PDF

Datasheet Details

Part number:

UPA611TA

Manufacturer:

NEC

File Size:

52.55 KB

Description:

N-channel mos field effect transistor for high speed switching.

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UPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING NEC

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