Datasheet Details
| Part number | UPC2747T |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 59.24 KB |
| Description | Si MMIC AMPLIFIER |
| Download | UPC2747T Download (PDF) |
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|
| Part number | UPC2747T |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 59.24 KB |
| Description | Si MMIC AMPLIFIER |
| Download | UPC2747T Download (PDF) |
|
|
|
The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process.
The NESAT III process produces transistors with fT approaching 20 GHz.
This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications.
3 V, 900 MHz Si MMIC AMPLIFIER UPC2747T.
| Part Number | Description |
|---|---|
| UPC2747TB | 3 V/ SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS |
| UPC2745T | 3 V/ 2.7 GHz Si MMIC WIDEBAND AMPLIFIER |
| UPC2745TB | 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC2746TB | 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC2748TB | 3 V/ SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS |
| UPC2749T | 3 V/ 1900 MHz LOW NOISE SI MMIC AMPLIFIER |
| UPC2749TB | 3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS |
| UPC2708T | 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER |
| UPC2708TB | 5 V/ SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER |
| UPC2709T | 5 V / SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER |