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UPC8119T - VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

General Description

The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier.

Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone.

Key Features

  • Recommended operating frequency : f = 100 MHz to 1.92 GHz.
  • Supply voltage.
  • Low current consumption.
  • Gain control voltage.
  • Two types of gain control : VCC = 2.7 to 3.3 V : ICC = 11 mA TYP. @ VCC = 3.0 V : VAGC = 0.6 to 2.4 V (recommended) : µPC8119T = VAGC up vs. Gain down (Forward control) (Reverse control) µPC8120T = VAGC up vs. Gain up.
  • AGC control can be constructed by external control circuit.
  • High-density surface mounting AP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8119T, µPC8120T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package contribute to make system lower voltage, decreased space and fewer components. The µPC8119T and µPC8120T are manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes.