Datasheet Details
| Part number | UPD2114L-5 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 239.39 KB |
| Description | 4K-Bit Static RAM |
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Download the UPD2114L-5 datasheet PDF. This datasheet also includes the UPD2114L variant, as both parts are published together in a single manufacturer document.
| Part number | UPD2114L-5 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 239.39 KB |
| Description | 4K-Bit Static RAM |
| Datasheet |
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4098 BIT (1024 )( 4 BITS) STATIC RAM The NEC I.lPD2114L is a 4096 bit static Random Access Memory organized as 1024 words by 4 bits using N-channeISilicon-gate MOS technology_ It uses fully DC stable (static) circuitry throughout, in both the array and the decoding_ It therefore requires no clocks or refreshing to operate and simplifies system design.
The data is read out nondestructively and has the same polarity as the input data_ Common input/output pins are provided.
II The I.lPD2114L is designed for memory applications where high performance, low cost, large bit storage, and simple interfacing are important design objectives.
NEe Microcomputers, Inc.
NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI.
PD2114L·3 JI.
| Part Number | Description |
|---|---|
| UPD2114L-1 | 4K-Bit Static RAM |
| UPD2114L-2 | 4K-Bit Static RAM |
| UPD2114L-3 | 4K-Bit Static RAM |
| UPD2114L | 4K-Bit Static RAM |
| UPD2118 | 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
| UPD2118-2 | 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
| UPD2118-3 | 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
| UPD2101AL-2 | 1K-Bit Static MOS RAM |
| UPD2101AL-4 | 1K-Bit Static MOS RAM |
| UPD2102AL-2 | 1K-Bit Fully Decoded Static MOS RAM |